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BTS 4880 R
Smart Power High-Side-Switch Eight Channels: 8 x 200 m
Features * Output current 0,625 A per channel * Short circuit protection * Maximum current internally limited * Overload protection * Input protection * Overvoltage protection (including load dump) * Undervoltage shutdown with autorestart and hysteresis * Switching inductive loads * Thermal shutdown with restart * Thermal independence of separate channels * ESD - Protection * Loss of GND and loss of Vbb protection * Very low standby current * Reverse battery protection * Programmable input for CMOS or Vbb /2 * Common diagnostic output ( current output ) for overtemperature Product Summary Overvoltage protection Operating voltage On-state resistance Vbb(AZ) RON 47 200 V m Vbb(on) 11...45 V
P-DSO-36-12; -10
Application
* Output driver for industrial applications ( PLC ) * All types of resistive, inductive and capacitive loads * C or optocoupler compatible power switch for 24 V DC applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or Vbb/2 compatible input and common diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
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2004-01-27
BTS 4880 R
Block Diagram
D IA G V bb LS U ndervoltage shutdow n w ith restart
Input Level S hifter
C om m on D iagnostic
V oltage source
O vervoltage protection
Logic each channel
Logic each channel
Logic each channel
C urrent lim it
G ate protection Tem perature sensor O U T1
C harge pum p Level shifter
Logic each channel
Lim it for unclam ped ind. loads
R ectifier O U T2 ESD Logic OUT3
IN 1 R IN IN 2
O U T4 IN 3 C hannel 2...7 IN 4 IN 5 IN 6 IN 7 C urrent lim it G ate protection T em perature sensor OUT8 O U T6 O U T5
O U T7
C harge pum p Level shifter R ectifier IN 8 ESD R IN
GND
Lim it for unclam ped ind. loads
Logic
m iniP R O FET
S ignal G N D
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2004-01-27
BTS 4880 R
Pin 1,2,4,5 3 6 7 8 9 10 11 12 13 14-18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 TAB
Symbol NC LS IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NC GND DIAG OUT8 OUT8 OUT7 OUT7 OUT6 OUT6 OUT5 OUT5 OUT4 OUT4 OUT3 OUT3 OUT2 OUT2 OUT1 OUT1 Vbb
Function not connected Enable pin for switching the input-levels to V bb/2 Input, activates channel 1 in case of logic high signal Input, activates channel 2 in case of logic high signal Input, activates channel 3 in case of logic high signal Input, activates channel 4 in case of logic high signal Input, activates channel 5 in case of logic high signal Input, activates channel 6 in case of logic high signal Input, activates channel 7 in case of logic high signal Input, activates channel 8 in case of logic high signal not connected Logic ground Common diagnostic output for overtemperature High-side output of channel 8 High-side output of channel 8 High-side output of channel 7 High-side output of channel 7 High-side output of channel 6 High-side output of channel 6 High-side output of channel 5 High-side output of channel 5 High-side output of channel 4 High-side output of channel 4 High-side output of channel 3 High-side output of channel 3 High-side output of channel 2 High-side output of channel 2 High-side output of channel 1 High-side output of channel 1 Positive power supply voltage
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BTS 4880 R Maximum Ratings Parameter at Tj = -40...135 C, unless otherwise specified Supply voltage Continuous input voltage2) Continuous voltage at LS-pin Load current (Short - circuit current, see page 6) Current through input pin (DC), each channel Reverse current through GND-pin 1) Operating temperature Storage temperature Power dissipation 3) Inductive load switch-off energy dissipation 4) single pulse, Tj = 125 C, IL = 0.625 A one channel active all channels simultaneously active ( each channel ) Load dump protection 4) VLoadDump5)= VA + VS VIN= low or high td = 400 ms, RI = 2 , RL = 27 , VA = 13.5 V td = 350 ms, RI = 2 , RL = 47 , VA = 27 V Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin, LS pin, Common diagnostic pin all other pins Continuous reverse drain current1)4), each channel IS
1defined by P tot 2At V > Vbb, the input current is not allowed to exceed 5 mA. IN 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 4not subject to production test, specified by design 5V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.
Symbol Vbb VIN VLS IL IIN -IGND Tj Tstg Ptot EAS
Value -1 1)...45 -10...V bb -1...Vbb self limited 5 1.6 internal limited -55 ... +150 3.3
Unit V
A mA A C W J
10 1 VLoaddump 90 117 VESD kV V
1 5 4 A
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BTS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Thermal Characteristics Thermal resistance junction - case Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) Load Switching Capabilities and Characteristics On-state resistance Tj = 25 C, IL = 0.5 A Tj = 125 C Turn-on time Turn-off time Slew rate on Slew rate off to 90% VOUT to 10% VOUT 10 to 30% VOUT , 70 to 40% V OUT, ton toff dV/dton -dV/dtoff RL = 47 , V IN = 0 to 10 V 75 1 1 150 2 2 V/s RL = 47 , V IN = 10 to 0 V RL = 47 , V bb = 15 V RL = 47 , V bb = 15 V RON 150 270 50 200 320 100 s m RthJC Rth(JA) Rth(JA) 1.5 50 38 K/W Symbol min. Values typ. max. Unit
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
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BTS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Standby current Operating current 1) Leakage output current (included in Ibb(off)) VIN = low , each channel Protection Functions2) Initial peak short circuit current limit Tj = -25 C, Vbb = 30 V, tm = 700 s Tj = 25 C Tj = 125 C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Overvoltage protection 3) Thermal overload trip temperature 4) Thermal hysteresis IL(SCr) VON(CL) Vbb(AZ) Tjt Tjt IL(SCp) 0.7 47 47 135 1.4 1.1 53 10 1.9 60 C K V A Ibb(off) IGND IL(off) 50 5 5 150 12 10 A mA A Vbb(on) Vbb(under) Vbb(u rst) Vbb(under) 11 7 0.5 45 10.5 11 V Symbol min. Values typ. max. Unit
1contains all input currents 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 3 see also V ON(CL) in circuit diagram on page 10 4 higher operating temperature at normal function for each channel available
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BTS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Input Continuous input voltage1) Input turn-on threshold voltage CMOS 2) Input turn-off threshold voltage CMOS 2) Input turn-on threshold voltage V bb/2 2) Input turn-off threshold voltage Vbb/22) Input threshold hysteresis Off state input current CMOS ( each channel ) On state input current CMOS ( each channel ) Off state input current V bb/2 ( each channel ) On state input current Vbb/2 ( each channel ) Input delay time at switch on Vbb Input resistance (see page 10) Internal pull down resistor at LS-pin 3) Diagnostic Characteristics Common diagnostic output current 4) ( overtemperature of any channel ) Tj = 135 C Common diagnostic output leakage current I diag(high) 2 A I diag 2 3 4 mA VIN VIN(T+) VIN(T-) VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) IIN(off) IIN(on) td(Vbbon) RI RLS -10 0.8 V bb/2-1
Symbol min.
Values typ. 0.3 340 3 800 max. Vbb 2.2 V bb/2+1
Unit
V
70 260 4 s k A
8 80 150 2 300
1At V > Vbb, the input current is not allowed to exceed 5 mA. IN 2see page 9 3LS-pin is connected to V bb 4see page 10
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BTS 4880 R Electrical Characteristics Parameter at Tj = -25...125C, Vbb=15...30V, unless otherwise specified Reverse Battery Reverse battery voltage1) RGND = 0 RGND = 150 Diode forward on voltage IF = 1.25 A, VIN = low , each channel -VON -Vbb 1 45 1.2 V Symbol min. Values typ. max. Unit
1defined by P tot
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BTS 4880 R Truth table for common diagnostic pin ( LED-driver ): Input level Normal operation Short circuit to GND Undervoltage Overtemperature L H L H L H L H Output level L H L L L L L L L L L L L L L H1) Diagnostic
L = no diagnostic output current H = diagnostic output current typ. 2 mA (see page 7) Programmable input:
IN
V bb
Logic
LS
GND
Input Level Shifter
typ . 800 k
Functional description LS-Pin:
With using the LS-pin it is possible to change the input turn-on and -off threshold voltage between CMOS and half supply voltage level. Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ). If the LS-pin is not connected the input threshold voltages are automatically at CMOS level, caused by an internal pull down to GND with typ. 800k ( see circuit ). State 1: LS-Pin to GND State 2: LS-Pin to supply voltage
1toggeling with restart
CMOS - Input level Vbb/2 - Input level
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2004-01-27
BTS 4880 R Terms each channel
Ibb LS I IN V bb V IN1...8 Vbb PROFET I DIAG DIAG IL OUT1...8
OUT GND
Inductive and overvoltage output clamp each channel
+ Vbb V Z V ON
VON
IN
GND I GND VOUT
VON clamped to 47 V min.
Input circuit (ESD protection) each channel
V bb R IN I
Overvoltage protection of logic part
+ Vbb V IN
Z2
L o g ic
ST
I GND
I
GND
R GND
o p tio n a l
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
S ig n a l G N D
VZ2=Vbb(AZ)=47 V min., RI =3 k typ., RGND=150
Reverse battery protection each channel
- Vbb RI
Common diagnostic output
Vbb
IN
OUT L o g ic
Power In v e r s e D io d e
Logic
DIAG
GND RGND
o p ti o n a l S ig n a l G N D
RL
Power GND
ESD
RGND=150, RI=3k typ., Temperature protection is not active during inverse current Output current typ. 2 mA
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2004-01-27
BTS 4880 R GND disconnect Inductive Load switch-off energy dissipation, each channel
E bb
LS IN1...8
Vbb PROFET
DIAG OUT1...8
IN Vbb PROFET GND OUT
E AS E Load
GND V bb V IN V GND
=
ZL
{
RL
L
EL
ER
GND disconnect with GND pull up
Energy stored in load inductance: EL = 1/2 * L * IL2
LS IN1...8 Vbb PROFET GND DIAG OUT1...8
While demagnetizing load inductance, the energy dissipated in PROFET is E AS = E bb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0:
E AS =
V bb V IN V ST V GND
IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL
Vbb disconnect with charged inductive load
LS high IN1...8
Vbb PROFET GND
DIAG OUT1...8
V
bb
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2004-01-27
BTS 4880 R Typ. on-state resistance RON = f(Tj) ; Vbb = 15V ; V in = high
0.3
Typ. on-state resistance RON = f(Vbb ); IL = 0.5A ; Vin = high
0.3
125C
RON
0.2
RON
0.2
25C
0.15
0.15
0.1
0.1
-25C
0.05
0.05
0 -25
0
25
50
75
C Tj
125
0 10
15
20
25
30
35
40
V Vbb
50
Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 24V
2
Typ. input delay time at switch on V bb td(Vbbon) = f(Vbb); Tj = -25...125 C
0.5
A
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 10 0.1 0.2
ms
td(Vbbon)
0 25 50 75
IL(SCp)
0.3
C Tj
125
15
20
25
30
35
40
V Vbb
50
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BTS 4880 R Typ. turn on time ton = f(Tj ); RL = 47
100
Typ. turn off time toff = f(Tj); RL = 47
100
s
80 70
s
80 70
ton
60 50 40 30 20 10 0 -25
toff
0 25 50 75 125
60 50 40 30 20 10 0 -25
C Tj
0
25
50
75
C Tj
125
Typ. slew rate on dV/dton = f(T j) ; RL = 47 , Vbb = 15 V
1
Typ. slew rate off dV/dtoff = f(Tj); R L = 47 , V bb = 15 V
1.4
V/s V/s dV dton -dV dtoff
0.6 0.4 0.2 0.2 0 -25 0 25 50 75 125 1
0.8
0.6
0.4
C Tj
0 -25
0
25
50
75
C Tj
125
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2004-01-27
BTS 4880 R Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 30V ; VIN = low
50
Typ. leakage current I L(off) = f(Tj) ; Vbb = 30V ; VIN = low
4
A
A
3
Ibb(off)
I L(off)
30
2.5
2 20
1.5
1 10 0.5
0 -25
0
25
50
75
C Tj
125
0 -25
0
25
50
75
C Tj
125
Typ. common diagnostic output current Idiag = f(Vbb ) ; Tj = 135C
3
Typ. internal pull down resistor at LS-pin RLS = f(Vbb ); VLS = Vbb
1.5
mA
M
125C
I diag
RLS
1
2.8
25C
0.75 2.7 0.5
-25C
2.6
0.25
2.5 10
15
20
25
30
35
45 V Vbb
0 10
15
20
25
30
35
40
V Vbb
50
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BTS 4880 R Typ. input current @ CMOS level IIN(on/off) = f(Tj); Vbb = 15V; VIN = low/high VINlow 0,8V; VINhigh = 2,2V
50 50
-25C
Typ. input current @ CMOS level I IN = f(VIN); V bb = 15V
A
on
A
25C
IIN
IIN
30
off
30
125C
20
20
10
10
0 -25
0
25
50
75
C Tj
125
0 0
2.5
5
7.5
10
V VIN
15
Typ. input current @ Vbb/2 level IIN(on/off) = f(Tj); Vbb = 30V; VIN = low/high
180
Typ. input current @ V bb/2 level I IN = f(VIN); V bb = 30 V
200
A
on
A
-25C
140 120 100
off
150
25C
I IN
I IN
125
125C
100 80 75 60 40 20 0 -25 50
25
0
25
50
75
C Tj
125
0 0
5
10
15
20
V VIN
30
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BTS 4880 R Typ. input threshold voltage @ CMOS level VIN(th) = f(Tj ) ; Vbb = 15V
2
Typ. input threshold voltage @ CMOS level VIN(th) = f(Vbb) ; Tj = 25C
2
V
on
V
on
1.6 1.5
VIN(th)
1.4 1.2 1 0.8 0.6
off
VIN(th)
off
1.25
1
0.75
0.5 0.4 0.2 0 -25 0.25
0
25
50
75
C Tj
125
0 10
15
20
25
30
35
40
V Vbb
50
Typ. input threshold voltage @ Vbb/2 level VIN(th) = f(Tj ) ; Vbb = 30V
16
Typ. input threshold voltage @ Vbb/2 level: LS-pin connected to V bb VIN(th) = f(V bb) ; Tj = 25C
25
V
on
V
15
20
off
VIN(th)
14.5
VIN(th)
on
17.5
off
14
15
13.5
12.5
13
10
12.5
7.5
12 -25
0
25
50
75
C Tj
125
5 10
15
20
25
30
35
40
V Vbb
50
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2004-01-27
BTS 4880 R Maximum allowable load inductance for a single switch off, calculated L = f(IL); Tjstart =125C, Vbb=24V, RL=0
45
Maximum allowable inductive switch-off energy, single pulse EAS = f(IL ); Tjstart = 125C, Vbb = 24V
3.5
all channels simultaneously active
H
35
all channels simultaneously active
J
2.5
L
EAS
2 1.5 1 0.5 300 400 500 600
30 25 20 15 10 5 0 200
mA IL
800
0 200
300
400
500
600
mA IL
800
Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T
10
2
Typ. transient thermal impedance Z thJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T
10 2
K/W
D = 0.5 D = 0.2
K/W
D = 0.5
10 1
10 1
D = 0.2 D = 0.1 D = 0.05
Z thJA
D = 0.05 D = 0.02 D = 0.01
10 0
Z thJA
D = 0.1
10 0 D = 0.02
D = 0.01
10 -1
D=0
10 -1
D=0
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
s
10
4
10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10
s
10
4
tp
Page 17
tp
2004-01-27
BTS 4880 R
Timing diagrams
Figure 1a: Vbb turn on:
IN
Figure 2b: Switching a lamp
IN
Vb b
V
OUT
I
L
I
L
D IA G t
DIAG
t d (V b b o n )
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition
IN
Figure 2c: Switching an inductive load
IN
V
OUT
90% t on d V /d to n 10% t d V / d to ff
VO U T
o ff
IL
IL
t
D IA G
D IAG
Page 18
2004-01-27
BTS 4880 R
Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling
IN
Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling
IN
V
OUT
V
O u tp u t s h o r t to G N D
OUT
n o rm a l o p e r a tio n
O u tp u t s h o r t to G N D
I
L
I
L (S C p )
I
I L (S C r)
L
I
L (S C r)
D IA G t
D IA G t
Heating up of the chip may require several milliseconds, depending on external conditions.
Figure 4: Overtemperature: Reset if Tj < Tjt
IN
Figure 5: Undervoltage shutdown and restart
IN
V OUT
10,5V
Vbb
Vout
TJ
DIAG t
D IA G t
t d(Vbbon)
Page 19
2004-01-27
BTS 4880 R
Package and ordering code
all dimensions in mm
Ordering code: BTS 4880 R
A 15.9 0.1 1)
Q67060-S7020
C
+0.07 0.25 -0.02
1.3
3.5 max.
1.10.1
110.15 1) 2.8
B
0.1
15.74 0.1 (Heatslug)
6.3 0.95 0.15 14.2 0.3
0
0.25 B
13.7 -0.2
0.1 C 36x Seating Plane
3.2 0.1
36
CODE
19
Index Marking
1 0.65 1 x 45
18 +0.13 0.25
5.9 0.1
0.25 M C A B
17 x 0.65 = 11.05
1)
Does not include plastic or metal protrusion of 0.15 max. per side
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 20
5 0.3
+0.1
2004-01-27

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